Controls of undersaturation on etch pit formation

被引：0
|
作者：
Teng, HH [1 ]
机构：
[1] George Washington Univ, Dept Earth & Environm Sci, Washington, DC 20052 USA
来源：
GEOCHIMICA ET COSMOCHIMICA ACTA | 2002年 / 66卷 / 15A期
关键词：
D O I：
暂无
中图分类号：
P3 [地球物理学]; P59 [地球化学];
学科分类号：
0708 ; 070902 ;
摘要：
引用
收藏
页码：A768 / A768
页数：1
相关论文
共 50 条
  • [1] CHEMICAL CONTROLS ON ETCH PIT FORMATION AT DISLOCATION OUTCROPS IN QUARTZ
    BRANTLEY, SL
    CRANE, SR
    CRERAR, DA
    HELLMANN, R
    STALLARD, R
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1985, 190 (SEP): : 58 - GEC
  • [2] Controls by saturation state on etch pit formation during calcite dissolution
    Teng, HH
    [J]. GEOCHIMICA ET COSMOCHIMICA ACTA, 2004, 68 (02) : 253 - 262
  • [3] DISLOCATION ETCH PIT FORMATION IN SODIUM CHLORIDE
    MENDELSON, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (08) : 1579 - &
  • [4] DISLOCATION ETCH PIT FORMATION IN LITHIUM FLUORIDE
    GILMAN, JJ
    JOHNSTON, WG
    SEARS, GW
    [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) : 747 - 754
  • [5] Effects of pretreatment on the aluminium etch pit formation
    Lee, Jaekwang
    Kim, Jiyoung
    Kim, Jutae
    Lee, Junhee
    Chung, Hwayong
    Tak, Yongsug
    [J]. CORROSION SCIENCE, 2009, 51 (07) : 1501 - 1505
  • [6] DISLOCATION ETCH PIT FORMATION ON CADMIUM CRYSTAL
    NISHIKAWA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1647 - 1648
  • [7] Etch pit formation on metal films by wet chemicals
    Lee, C
    [J]. METALS AND MATERIALS-KOREA, 1999, 5 (01): : 39 - 42
  • [8] EFFECT OF OXYGEN ON ETCH-PIT FORMATION IN SILICON
    LOGAN, RA
    PETERS, AJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1419 - 1423
  • [9] Etch pit formation on metal films by wet chemicals
    Chongmu Lee
    [J]. Metals and Materials, 1999, 5 : 39 - 42
  • [10] Detection of Defects in Diamond by Etch-Pit Formation
    Shimaoka, Takehiro
    Ichikawa, Kimiyoshi
    Koizumi, Satoshi
    Watanabe, Kenji
    Teraji, Tokuyuki
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (21):
12345