Wavelength conversion in silicon using Raman induced four-wave mixing

被引：47

作者：

Raghunathan, V ^{[1
]}

Claps, R ^{[1
]}

Dimitropoulos, D ^{[1
]}

Jalali, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 01期

关键词：

D O I：

10.1063/1.1768310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conversion of digital- and analog-modulated optical signals from the 1550 nm band to the 1300 nm band is demonstrated in silicon waveguides. The conversion is based on parametric Stokes to anti-Stokes coupling using the Raman susceptibility of silicon. (C) 2004 American Institute of Physics.

引用

页码：34 / 36

页数：3

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