A physics-based model for the substrate resistance of MOSFETs

被引：4
|
作者：
Gao, XF
Liou, JJ [1 ]
Ortiz-Conde, A
Bernier, J
Croft, G
机构：
[1] Univ Cent Florida, Sch EE & CS, Orlando, FL 32816 USA
[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
[3] Univ Simon Bolivar, Dept Elect Engn, Caracas, Venezuela
[4] Intersil Corp, Reliabil Dept, Palm Bay, FL 32902 USA
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 06期
关键词：
substrate resistance; MOSFETs; modeling; impact ionization; electrostatic discharge;
D O I：
10.1016/S0038-1101(01)00345-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A compact and accurate model for the substrate resistance is essential and critical for the characterization of MOSFET operation, particularly for the case of relatively large drain current and sizeable substrate current. This paper develops such a model taking into account the effects of device geometry, impact ionization, and conductivity modulation. Comparison of the present and existing models is given, and results obtained from device simulation are included in support of the model. (C) 2002 Published by Elsevier Science Ltd.
引用
收藏
页码：853 / 857
页数：5
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