Maximizing Integrated Optical and Electrical Properties of a Single ZnO Nanowire through Native Interfacial Doping

被引:19
|
作者
Ding, Huaiyi [1 ]
Pan, Nan [1 ,4 ]
Ma, Chao [2 ]
Wu, Yukun [1 ]
Li, Junwen [1 ]
Cai, Hongbing [1 ]
Zhang, Kun [1 ]
Zhang, Guanghui [1 ]
Ren, Wenzhen [1 ]
Li, Jianqi [2 ]
Luo, Yi [1 ,3 ,4 ]
Wang, Xiaoping [1 ,4 ]
Hou, J. G. [1 ,4 ]
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
[3] Royal Inst Technol, Sch Biotechnol, Dept Theoret Chem & Biol, S-10691 Stockholm, Sweden
[4] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
nanowires; core-shell structures; doping; ZnO; optical materials; FABRICATION; LUMINESCENCE; MECHANISM; EXCITON;
D O I
10.1002/adma.201305340
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A native interfacial doping layer introduced in core-shell type ZnO nanowires by a simple vapor phase re-growth procedure endows the produced nanowires with both excellent electrical and optical performances compared to conventional homogeneous ZnO nanowires. The unique Zn-rich interfacial structure in the core-shell nanowires plays a crucial role in the outstanding performances. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3035 / 3041
页数:7
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