Silicon-germanium nanostructures for on-chip optical interconnects

被引：8

作者：

Tsybeskov, L. ^{[1
]}

Lee, E. -K. ^{[1
]}

Chang, H. -Y. ^{[1
]}

Lockwood, D. J. ^{[2
]}

Baribeau, J. -M. ^{[2
]}

Wu, X. ^{[2
]}

Kamins, T. I. ^{[3
]}

机构：

[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Hewlett Packard Labs, Informat & Quantum Syst Lab, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 95卷 / 04期

基金：

美国国家科学基金会;

关键词：

BAND-EDGE PHOTOLUMINESCENCE; RAMAN-SCATTERING; LIGHT-EMISSION; CW OPERATION; GE ISLANDS; GROWTH; SI; TEMPERATURE; DOTS; STRAIN;

D O I：

10.1007/s00339-009-5111-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon-germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and three-dimensional (quantum dots) nanostructures exhibits photoluminescence and electroluminescence in the technologically important spectral range of 1.3-1.6 mu m. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency, and a long carrier radiative lifetime. This paper summarizes recent progress in the understanding of carrier recombination in Si/SiGe nanostructures and presents a potential new route toward CMOS compatible light emitters for on-chip optical interconnects.

引用

页码：1015 / 1027

页数：13

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