Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

被引：700
|
作者：
Akiyama, Morito [1 ]
Kamohara, Toshihiro [1 ]
Kano, Kazuhiko [2 ]
Teshigahara, Akihiko [2 ]
Takeuchi, Yukihiro [2 ]
Kawahara, Nobuaki [2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Measurement Solut Res Ctr, Saga 8410052, Japan
[2] DENSO CORP, Res Labs, Aichi 4700111, Japan
来源：
ADVANCED MATERIALS | 2009年 / 21卷 / 05期
关键词：
TEMPERATURE; GROWTH; SCXGA1-XN;
D O I：
10.1002/adma.200802611
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A high-temperature piezoelectric material exhibits a good balance between high maximum use temperature and large piezoelectricity. This is achieved by the combination of the discovery of a phase transition in scandium aluminum nitride (Sc(x)Al(1-x)N) alloy thin films, and the use of dual cosputtering, which leads to non-equilibrium alloy thin films.
引用
收藏
页码：593 / +
页数：5
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