InP-based monolithically integrated photoreceivers

被引：1
|
作者：
Lunardi, LM
机构：
来源：
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1997年
关键词：
D O I：
10.1109/ICIPRM.1997.600196
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoreceivers, composed by a InGaAs photodetector monolithically integrated with either field-effect or bipolar transistor-based amplifiers, have achieved high-speed and high-sensitivities up to 20 Gb/s in single channel or aggregated throughput in multichannel configurations. A review of high performance InP-based technologies targeted to fiber optic communication applications is presented.
引用
收藏
页码：471 / 474
页数：4
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