Ab initio calculations and quantum statistical analysis of the SiH3+NO reaction

被引:7
|
作者
Sengupta, D
Nguyen, MT
机构
[1] Department of Chemistry, University of Leuven, B-3001 Leuven
关键词
D O I
10.1016/S0009-2614(96)01430-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ab initio molecular orbital calculations of the possible pathways for the SiH3+NO reaction have been carried out at the QCISD(T)/6-311++G(d,p)//MP2/6-31G(d,p) level. Activation barriers, vibrational wavenumbers and moments of inertia of the relevant structures were then utilized for further calculation of the rate constants using quantum statistical Rice-Ramsperger-Kassel theory. Kinetic analysis shows that over a wide range of temperatures and pressures, the disappearance of the reactants is primarily due to the formation of nitrososilane H3SiNO adduct. At high temperatures (>1800 K), however, the formation of HNSi+H2O becomes possible. Using higher level calculations, the standard heats of formation (Delta H-f,298(0)) of the product isomers are also estimated, namely H3SiNO: 162 kJ/mol, H2SiNOH: 177 kJ/mol and HSiNHOH: 129 kJ/mol, with a probable error of +/-10 kJ/mol; the silylene form is thus the most stable isomer.
引用
收藏
页码:35 / 40
页数:6
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