Quantum confinement regime in silicon nanocrystals

被引：36

作者：

Derr, Julien ^{[1
]}

Dunn, Kerry ^{[1
]}

Riabinina, Daria ^{[1
]}

Martin, Francois ^{[1
]}

Chaker, Mohamed ^{[1
]}

Rosei, Federico ^{[1
]}

机构：

[1] Univ Quebec, INRS EMT, Varennes, PQ J3X 1S2, Canada

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Silicon quantum dots; Optical properties; Quantum confinement; Time-resolved photoluminescence; SI NANOCRYSTALS; PHOTOLUMINESCENCE; LUMINESCENCE; DEPENDENCE; ABSORPTION; EMISSION; DYNAMICS; LIGHT; DECAY;

D O I：

10.1016/j.physe.2008.11.008

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We study the origin of photoluminescence (PL) in Si nanocrystals embedded in a silicon-rich SiO2 matrix. PL properties as a function of time and temperature were investigated for nanocrystal diameters (d) ranging from about 1.5 to 4 nm. All our observations (logarithmic evolution of the timescale as a function of energy, gap associated temperature shift of the PL energy, and logarithmic evolution of size as a function of confinement energy) indicates that PL occurring in small nanocrystals (d<4 nm) originates from quantum confinement. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：668 / 670

页数：3

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