Phase diagrams and optical properties of phosphide, arsenide, and antimonide binary and ternary III-V nanoalloys

被引：28

作者：

Guisbiers, G. ^{[1
]}

Wautelet, M. ^{[2
]}

Buchaillot, L. ^{[1
]}

机构：

[1] IEMN, CNRS, UMR8520, F-59652 Villeneuve Dascq, France

[2] Univ Mons, B-7000 Mons, Belgium

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 15期

关键词：

aluminium compounds; energy gap; gallium compounds; III-V semiconductors; melting; nanostructured materials; phase diagrams; segregation; surface energy; thermo-optical effects; MELTING TEMPERATURE; SIZE DEPENDENCE; SEMICONDUCTOR NANOCRYSTALS; BIMETALLIC NANOPARTICLES; SMALL PARTICLES; SYSTEMS; SHAPE; NANOSTRUCTURES; SEGREGATION; MISCIBILITY;

D O I：

10.1103/PhysRevB.79.155426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a theoretical investigation, at the nanoscale, free of any adjustable parameters, concerning the size, shape, composition, and segregation effects on the melting temperature and energy band gap of zinc-blende III-V semiconductors. The corresponding nanophase diagram is established. From it, the composition and segregation effects on the energy band gap of the ternary semiconducting nanoalloy are deduced. Moreover, the liquid surface energies for AlP, GaP, AlAs, and AlSb have been calculated (0.566 +/- 0.060, 0.510 +/- 0.060, 0.506 +/- 0.060 J/m(2), and 0.441 +/- 0.060 J/m(2), respectively). The information obtained in this study can be used to tune the thermo-optical properties of III-V nanomaterials in nano-optoelectronics.

引用

页数：8

共 50 条

[1] CALCULATION OF TERNARY PHASE-DIAGRAMS OF III-V SYSTEMS
STRINGFELLOW, GB
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (03) : 665 - +
[2] Doping of III-V Arsenide and Phosphide Wurtzite Semiconductors
Giorgi, Giacomo
Amato, Michele
Ossicini, Stefano
Cartoixa, Xavier
Canadell, Enric
Rurali, Riccardo
JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 124 (49): : 27203 - 27212
[3] Nonempirical calculation of III-V ternary semiconductor phase diagrams
Mohri, Tetsuo, 1600, (28):
[4] Epitaxial ternary and quaternary III-V antimonide substrates
Mauk, MG
Cox, JA
Sulima, OV
Datta, S
Tata, AN
IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 213 - 222
[5] Optical properties of random III-V ternary semiconducting alloys
Ganguli, B
Mookerjee, A
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (24): : 3681 - 3695
[6] Properties of GaSb substrate wafers for MOCVD III-V antimonide
Peng, Ruiwu
Ding, Yongqing
Xu, Chenmei
Wang, Zhanguo
Rare Metals, 1998, 17 (02): : 161 - 165
[7] CALCULATION OF QUATERNARY III-V PHASE-DIAGRAMS
STRINGFELLOW, GB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C99 - C99
[8] Synthesis and characterization of binary and ternary III-V quantum dots
Micic, OI
Nozik, AJ
JOURNAL OF LUMINESCENCE, 1996, 70 : 95 - 107
[9] Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys
Navamathavan, R.
Arivuoli, D.
Attolini, G.
Pelosi, C.
Choi, Chi Kyu
PHYSICA B-CONDENSED MATTER, 2007, 392 (1-2) : 51 - 57
[10] Equilibrium phase diagrams for Stranski-Krastanov structure mode of III-V ternary quantum dots
Nakajima, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4A): : 1875 - 1883

← 1 2 3 4 5 →