Au catalyst Assisted Growth of ZnO Nanowires by Vapour Phase transport method on p-Si and Fabrication of p-Si/n-ZnO heterojunction diode

被引：11
|
作者：
Bhat, Shashidhara [1 ]
Shrisha, B., V [1 ]
Naik, K. Gopalakrishna [1 ]
机构：
[1] Mangalore Univ, Dept Phys, Mangalagangothri 574199, Karnataka, India
来源：
PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS) | 2015年 / 1665卷
关键词：
ZnO nanowires; Vapour phase transport growth; FESEM; ZINC-OXIDE;
D O I：
10.1063/1.4917814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work ZnO nanowires were grown on p type silicon (p-Si) substrate using Vapor-Liquid-Solid (VLS) approach using Au as catalyst by vapor phase transport growth method. Surface morphology and structural properties of the grown ZnO nanowires were examined by Scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. Using the n-ZnO nanowires (NW) grown on p-type silicon, n-ZnO NW/p-Si heterojunction diode was fabricated. The rectification property of the fabricated diode was studied by room temperature as well as high temperature (up to 370 K) current-voltage (I-V) measurements.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Fabrication of Heterojunction Diode Based on n-ZnO Nanowires/p-Si Substrate: Temperature Dependent Transport Characteristics
    Badran, R. I.
    Umar, Ahmad
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (01) : 581 - 587
  • [2] Fabrication and characterization of p-Si nanowires/ZnO film heterojunction diode
    Choi, Ji-Hyuk
    Das, Sachindra Nath
    Moon, Kyeong-Ju
    Kar, Jyoti Prakash
    Myoung, Jae-Min
    [J]. SOLID-STATE ELECTRONICS, 2010, 54 (12) : 1582 - 1585
  • [3] Growth and Properties of Aligned ZnO Nanowires and Their Applications to n-ZnO/p-Si Heterojunction Diodes
    Al-Heniti, S. H.
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (10) : 6606 - 6611
  • [4] Electrical Properties of p-Si/n-ZnO Nanowires Heterojunction Devices
    Al-Heniti, S.
    Badran, R. I.
    Al-Ghamedi, A. A.
    Ai-Agel, F. A.
    [J]. ADVANCED SCIENCE LETTERS, 2011, 4 (01) : 24 - 28
  • [5] Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters
    Ilican, Saliha
    Gorgun, Kamuran
    Aksoy, Seval
    Caglar, Yasemin
    Caglar, Mujdat
    [J]. JOURNAL OF MOLECULAR STRUCTURE, 2018, 1156 : 675 - 683
  • [6] Fabrication of n-ZnO:Al/p-Si(100) Heterojunction Diode and its Characterization
    Venu, Parvathy M.
    Dharmaprakash, S. M.
    Byrappa, K.
    [J]. 62ND DAE SOLID STATE PHYSICS SYMPOSIUM, 2018, 1942
  • [7] Fabrication and characterization of n-ZnO nanorods/p-Si (100) heterojunction
    Kieu Loan Phan Thi
    Lam Thanh Nguyen
    Anh Tuan Dao
    Nguyen Huu Ke
    Vu Tuan Hung Le
    [J]. JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS, 2015, 24 (04)
  • [8] Fabrication and Characterization of p-Si/n-ZnO Heterojunction Ultraviolet Photodetector
    Halder, Nripendra N.
    Biswas, Pranab
    Choudhuri, Arunavo
    Banerji, P.
    [J]. PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON CONDENSED MATTER PHYSICS 2014 (ICCMP 2014), 2015, 1661
  • [9] Electrical Characterization of n-ZnO Nanowires/p-Si based Heterojunction Diodes
    Somvanshi, Divya
    Jit, S.
    [J]. PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 589 - 592
  • [10] p-Si nanowires/SiO2/n-ZnO heterojunction photodiodes
    Huang, Chun-Ying
    Yang, Ying-Jay
    Chen, Ju-Ying
    Wang, Chun-Hsiung
    Chen, Yang-Fang
    Hong, Lu-Sheng
    Liu, Chie-Sheng
    Wu, Chia-Yin
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (01)
12345