Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy

被引：8

作者：

Tripathy, S ^{[1
]}

Soni, RK

Asahi, H

Gonda, S

机构：

[1] Indian Inst Technol, Dept Phys, New Delhi 110016, India

[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2000年 / 275卷 / 04期

关键词：

molecular beam epitaxy; photoluminescence; Raman scattering; yellow luminescence; shallow donors; electronic Raman scattering;

D O I：

10.1016/S0921-4526(99)00739-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have carried out defect-induced Raman scattering in resonance with yellow-luminescence (YL) transitions in GaN layers grown on sapphire by electron cyclotron resonance-molecular beam epitaxy technique. The photoluminescence (PL) data shows strong excitonic peaks in the near-band-edge region apart from the weak and broad yellow-luminescence transitions. Raman spectra from various GaN samples prepared by this technique show strong and distinct Raman peaks in the low-energy region (90-260 cm(-1)). These peaks are attributed to electronic excitations of donors, which are involved in the yellow-luminescence transitions. Resonant enhancement of these peaks is seen as a function of temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：301 / 307

页数：7

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