A CMOS Direct Injection-Locked Frequency Divider With High Division Ratios

被引：11

作者：

Sim, Sanghoon ^{[1
]}

Kim, Dong-Wook ^{[2
]}

Hong, Songcheol ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] Chungnam Natl Univ, Dept Radio Sci & Engn, Taejon 305764, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2009年 / 19卷 / 05期

关键词：

CMOS; direct injection; frequency divider (FD); high division ratio; high frequency; RANGE;

D O I：

10.1109/LMWC.2009.2017603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS injection-locked frequency divider (ILFD) with high division ratios and high frequency operation is presented. It consists of a ring oscillator and injection capacitors. An input signal is directly injected through the capacitors into the feedback nodes of the ring oscillator. The proposed ILFD is fabricated in a 0.18 mu m CMOS process and has a chip core size of 68 mu m x 70 mu m. It shows multiple division ratios of 3, 6, and 9. The operation frequency is from 2.2 to 30.95 GHz. At the maximum operation frequency, the ILFD has a locking range of 260 MHz with an input power of less than 0.25 dBm, a division ratio of 9, and a power consumption of 12.5 mW. The locking range increases up to 3.2 GHz as the division ratio and the operation frequency decrease.

引用

页码：314 / 316

页数：3

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