Time to digital converter;
single photon avalanche diode;
optical sensor;
CMOS;
silicon photomultiplier;
FLIGHT DEPTH SENSOR;
SILICON PHOTOMULTIPLIER;
0.18-MU-M CMOS;
ARRAY;
D O I:
10.1109/JSEN.2018.2803087
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A digital silicon photomultiplier in 130-nm CMOS imaging technology implements time-correlated single photon counting at an order of magnitude beyond the conventional pile-up limit. The sensor comprises a 32 x 32 43% fill-factor single photon avalanche diode array with a multi-event folded-flash time-to-digital converter architecture operating at 10 GS/s. 264 bins x 16 bit histograms are generated and read out from the chip at a maximal 188 kHz enabling fast time resolved scanning or ultrafast low-light event capture. Full optical and electrical characterization results are presented.