A CMOS SPAD Sensor With a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-Fast Optical Transient Capture

被引:36
|
作者
Al Abbas, Tarek [1 ]
Dutton, Neale A. W. [2 ]
Almer, Oscar [1 ]
Finlayson, Neil [1 ]
Della Rocca, Francescopaolo Mattioli [1 ]
Henderson, Robert [1 ]
机构
[1] Univ Edinburgh, Sch Engn, Edinburgh EH9 3JL, Midlothian, Scotland
[2] STMicroelectronics, Imaging Div, Edinburgh EH12 7BF, Midlothian, Scotland
基金
英国工程与自然科学研究理事会;
关键词
Time to digital converter; single photon avalanche diode; optical sensor; CMOS; silicon photomultiplier; FLIGHT DEPTH SENSOR; SILICON PHOTOMULTIPLIER; 0.18-MU-M CMOS; ARRAY;
D O I
10.1109/JSEN.2018.2803087
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A digital silicon photomultiplier in 130-nm CMOS imaging technology implements time-correlated single photon counting at an order of magnitude beyond the conventional pile-up limit. The sensor comprises a 32 x 32 43% fill-factor single photon avalanche diode array with a multi-event folded-flash time-to-digital converter architecture operating at 10 GS/s. 264 bins x 16 bit histograms are generated and read out from the chip at a maximal 188 kHz enabling fast time resolved scanning or ultrafast low-light event capture. Full optical and electrical characterization results are presented.
引用
收藏
页码:3163 / 3173
页数:11
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