Generation of Nonclassical Light upon Resonant Excitation of a Semiconductor Microcavity

被引：3

作者：

Lebedev, M. V. ^{[1
]}

Parakhonskii, A. L. ^{[1
]}

Demenev, A. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia

来源：

JETP LETTERS | 2015年 / 102卷 / 08期

基金：

俄罗斯基础研究基金会;

关键词：

AUTOCORRELATION FUNCTION; EMITTING FIELD; PHOTON PAIRS; FLUORESCENCE; REGIME;

D O I：

10.1134/S0021364015200060

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Strong correlations in the fluctuations of the intensity of emission from a semiconductor microcavity under resonant laser excitation are observed. The intensity correlation function exhibits an unusual oscillatory behavior with an unexpectedly long oscillation period and decay time. The visibility of the correlation function reaches 0.81. Long oscillation times are attributed to the Rabi frequency characterizing weak coupling between the electromagnetic field of the semiconductor microcavity mode and long-lived exciton states localized by the random potential of the quantum well. For a laser excitation power density of 400 W/cm(2), the power density of the radiation emitted by the microcavity is 12 W/cm(2), which corresponds to the total flux of nonclassical light of 1.5 x 10(15) photons/s from an excited spot 50 mu m in diameter. Thus, a microcavity can serve as a bright emitter of nonclassical light.

引用

页码：508 / 512

页数：5

共 50 条

[1] Generation of nonclassical light upon resonant excitation of a semiconductor microcavity
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A. L. Parakhonskii
A. A. Demenev
[J]. JETP Letters, 2015, 102 : 508 - 512
[2] On the origin of nonclassical light generation upon resonant excitation of a GaAs semiconductor microcavity
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