Electronic states in the t-J model

被引：1
|
作者：
Matsumoto, H
Saikawa, T
Mancini, F
Villani, D
机构：
[1] UNIV BRASILIA,ICCMP,BR-70919970 BRASILIA,DF,BRAZIL
[2] UNIV SALERNO,DIPARTIMENTO FIS TEOR,I-84081 BARONISSI,ITALY
[3] UNIV SALERNO,SMSA,I-84081 BARONISSI,ITALY
[4] UNIV SALERNO,UNITA INFM SALERNO,I-84081 BARONISSI,ITALY
来源：
PHYSICA C | 1997年 / 282卷
关键词：
D O I：
10.1016/S0921-4534(97)00963-5
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Doping dependence of electronic states in the t-J model is studied by use of the composite operator method. Spin-coupled composite electron operators are introduced to study spin effects from the nearest neighbor electrons. A change from a half-zone structure at half-filling to a flat band structure at low doping is obtained.
引用
收藏
页码：1773 / 1774
页数：2
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