Infrared reflection spectroscopy and effective medium modeling of As-anodized and oxidized porous silicon carbide

被引：9
|
作者：
Spanier, JE [1 ]
Herman, IP [1 ]
机构：
[1] Columbia Univ, Dept Appl Phys, Columbia Radiat Lab, New York, NY 10027 USA
来源：
JOURNAL OF POROUS MATERIALS | 2000年 / 7卷 / 1-3期
关键词：
porous silicon carbide; oxidation; effective medium theory; infrared reflectance (or IR); reststrahlen;
D O I：
10.1023/A:1009648518136
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
We present a study of the infrared reflectance of porous silicon carbide (PSC) formed by the electrochemical dissolution of silicon carbide substrates of both 6H and 4H polytypes. The reflectance from n-PSC, both as-anodized and passivated, is reported for the first time. The passivation of PSC has been accomplished using a short thermal oxidation. Fourier transform infrared (FTIR) reflectance spectroscopy is employed ex situ after different stages of the thermal oxidation process. The characteristics of the reststrahlen band normally observed in bulk SiC are altered by anodization; further changes in the reflectance spectra occur following oxidation for different periods of time. An effective medium theory model that includes air, SiC and SiO2 as component materials is shown to characterize the observed changes in the reflectance spectra after different stages of PSC oxidation.
引用
收藏
页码：139 / 142
页数：4
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