Time-dependent electron transport in HgTe/CdTe quantum wellsl

被引:1
|
作者
Ding, Kai-He [1 ]
Zhou, Guanghui [2 ,3 ]
机构
[1] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410076, Hunan, Peoples R China
[2] Hunan Normal Univ, Minist Educ, Dept Phys, Changsha 410081, Hunan, Peoples R China
[3] Hunan Normal Univ, Minist Educ, Key Lab Low Dimens Quantum Struct & Manipulat, Changsha 410081, Hunan, Peoples R China
关键词
Electron transport; HgTe/CdTe quantum wells; Radiation field; TOPOLOGICAL INSULATORS;
D O I
10.1016/j.physleta.2014.01.046
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on the Floquet theory and Keldysh's nonequilibrium Green's function methods, we study the electron transport through the HgTe/CdTe quantum wells (QWs) irradiated by a monochromatic laser field. We find that when the laser field is applied, the edge states are split into a series of sidebands. When the Fermi level lies among these sidebands, the quantized plateau of the conductance is destroyed. Instead, the conductance versus the radiation frequency exhibits the successive oscillation peaks corresponding to the resonant tunneling through the sidebands of the edge states. The resonant interaction between the quasiparticles and the radiation field opens the gaps in the crossing region of the sidebands, which can be tuned by the radiation strength and frequency. This leads to the shift of the oscillation peaks in the conductance. We also show that the amplitudes of the oscillation peaks in the conductance are governed by the radiation strength and frequency. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:966 / 969
页数:4
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