Simulation on the encapsulation effect of the high-G shock MEMS accelerometer

被引:0
|
作者
Jiang, YQ [1 ]
Du, MH [1 ]
Huang, WD [1 ]
Xu, W [1 ]
Luo, L [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
关键词
high-g MEMS accelerometer; encapsulation; finite element analysis;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The modal and the response during acceleration of high-g shock MEMS accelerometer were simulated using finite element method based on a practical packaging model. The modal frequency of the packaging structure increases with the Young's modulus of encapsulation resin. But the modal frequency may be smaller then that of the packaging structure without encapsulation if the encapsulation resin is very soft. Under the 100 kG acceleration (1 G = 9.8 m/s(2)), the simulated output voltage of accelerometer decreases slowly with the increase of Young's modulus or density of encapsulation resin. The simulated output voltages are close to the analytic results. They are also linear with the environmental accelerations.
引用
收藏
页码:52 / 55
页数:4
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