Fabrication of high-mobility n-type carbon nanotube thin-film transistors on plastic film

被引：9

作者：

Yasunishi, Tomohiro ^{[1
]}

Kishimoto, Shigeru ^{[1
]}

Kauppinen, Esko I. ^{[2
,3
]}

Ohno, Yutaka ^{[1
,4
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan

[2] Aalto Univ, Dept Appl Phys, Espoo 00076, Finland

[3] Aalto Univ, Ctr New Mat, Espoo 00076, Finland

[4] Aalto Univ, Multidisciplinary Inst Digitalisat & Energy, Espoo 00076, Finland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期

关键词：

carbon nanotube; thin-film transistor; n-type; chemical doping; flexible electronics; FIELD-EFFECT TRANSISTORS; COMPLEMENTARY LOGIC GATES; INTEGRATED-CIRCUITS; HIGH-PERFORMANCE; LOW-VOLTAGE; DEGREES-C; P-TYPE; NETWORKS; TRANSPARENT; NITRIDE;

D O I：

10.1002/pssc.201300231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated flexible n-type carbon nanotube thin-film transistors on a plastic film by a simple transfer process and a solution-based chemical doping technique with polyethyleneimine (PEI). There exists an optimal PEI concentration, which is determined by doping level and charge accumulation in the PEI layer. A high electron mobility of 70 cm(2)/Vs was achieved with an on/off ratio of 105 in ambient air. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1612 / 1615

页数：4

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