Time-resolved studies of InGaN/GaN quantum dots

被引:0
|
作者
Krestnikov, IL
Sakharov, AV
Lundin, WV
Usikov, AS
Tsatsulnikov, AF
Musikhin, YG
Gerthsen, D
Ledentsov, NN
Hoffmann, A
Bimberg, D
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
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关键词
D O I
10.1002/1521-396X(200207)192:1<49::AID-PSSA49>3.0.CO;2-B
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on structural and optical properties of InGaN inclusions in a GaN matrix. High-resolution transmission electron microscopy (HRTEM) studies and HRTEM image processing indicate the spontaneous formation of ultra-dense arrays of InGaN disc-like nano-inclusions. Non-resonant pulsed excitation results in a broad photoluminescence (PL) peak, which shifts towards longer wavelengths with time, demonstrating also an increase in decay time at the peak maximum. In contrast to that, resonant excitation into the non-resonant PL maximum results in an evolution of a sharp resonant PL peak, having a spectral shape defined by the excitation laser pulse and a radiative decay time close to that revealed for PL under non-resonant excitation. No spectral diffusion or PL peak energy shift caused by reduced piezoelectric screening at lower overall concentrations of non-equilibrium, carriers was found. These observations give a clear proof of the quantum dot nature of PL in our InGaN/GaN samples.
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页码:49 / 53
页数:5
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