Modeling dielectric response and losses of ferroelectrics at microwave frequencies

被引:0
|
作者
Zubko, SP [1 ]
机构
[1] Electrotech Univ, Dept Elect, St Petersburg 197376, Russia
关键词
incipient ferroelectrics; room temperature ferroelectrics; size effect; microwave losses; commutation quality factor;
D O I
10.1080/10584580212368
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Displacement type ferroelectric BaxSr1-xTiO3 is characterized by the second order phase transition. In a perfect ferroelectric crystal the phase transition takes place at temperature T-C, which is called the Curie temperature. In the case of the real crystal, the temperature of the phase transition T is displaced to lower temperature and the temperature of the maximum of epsilon(T) T-m is displaced to higher value with respect to T-C. Thus, for the real ferroelectric sample (not for an incipient ferroelectric), one has T-C' < T-C < T-m. In the case of a thin film sample, the phase transition and the dielectric response of a ferroelectric sample are affected by the size of the sample, what is treated as a size effect. Experimental data obtained as a result of measurement of the dielectric constant as a function of temperature can be used for finding the parameters of the material.
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页码:71 / 80
页数:10
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