Effect of CW laser illumination on Fe-doped β-Ga2O3

被引:1
|
作者
Wang, Ke [1 ]
Jiang, Hao [1 ]
Gong, Chen [1 ]
Murakami, Fumikazu [1 ]
Serita, Kazunori [1 ]
Murakami, Hironaru [1 ]
Tonouchi, Masayoshi [1 ]
机构
[1] Osaka Univ, Suita, Osaka 5650871, Japan
关键词
D O I
10.1109/IRMMW-THz50926.2021.9567220
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gallium oxide are a potential material for many applications and recent research showed its strong anisotropic properties in THz range. We applied THz-TDS and CW laser to study the excited carrier dynamics in our sample (Ga2O3, 010, Fe-doped). The results showed different response along two crystal axes. Along the a-axis we observed Drude response and conductivity are increasing with CW laser increasing, as the same as we expected. Our fitting results (by Drude model) of this direction also agreed with our expectation. Along the c-axis we observed non-Drude response and further experiments are needed.
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