MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

被引：11

作者：

Martyniuk, P. ^{[1
]}

Kozniewski, A. ^{[2
]}

Keblowski, A. ^{[2
]}

Gawron, W. ^{[1
]}

Rogalski, A. ^{[1
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland

[2] Vigo Syst SA, PL-05850 Ozarow Mazowiecki, Poland

来源：

OPTO-ELECTRONICS REVIEW | 2014年 / 22卷 / 02期

关键词：

MWIR; SWIR; HgCdTe heterostructures; HOT detectors; SWIR; GAP;

D O I：

10.2478/s11772-014-0186-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N(+)pP(+)n(+) HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6-3.6 mu m enabled to reach: detectivity similar to 8.7x10(10) cmHz(1/2)/W, responsivity similar to 1.72 A/W and time response similar to 145 ps (V = 200 mV).

引用

页码：118 / 126

页数：9

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