Alloying Buffer Layers in Colloidal CdSe/ZnS Core/Shell Nanocrystals

被引:1
|
作者
Zhang, Huichao [1 ]
Ye, Yonghong [2 ]
Yang, Boping [1 ]
Shen, Li [1 ]
Cui, Yiping [1 ]
Zhang, Jiayu [1 ]
机构
[1] Southeast Univ, Dept Elect Engn, Nanjing 210096, Jiangsu, Peoples R China
[2] Nanjing Normal Univ, Dept Phys, Nanjing 210097, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
LARGE-SCALE SYNTHESIS; QUANTUM DOTS; CORE/MULTISHELL NANOCRYSTALS; CDSE/CDS HETERONANOCRYSTALS; SEMICONDUCTOR NANOCRYSTALS; IN-VIVO; PHOTOLUMINESCENCE; SPECTROSCOPY; INTERFACE; RANGE;
D O I
10.1071/CH13574
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
When a ZnS shell is coated onto a CdSe core, some non-radiative defects are formed with the relaxation of the strain induced by the large lattice mismatch between CdSe and ZnS even though there are Zn0.5Cd0.5Se or ZnSe buffer layers, as indicated by the decrease of photoluminescent (PL) quantum yield and the reverse evolution of temperature-dependent time-resolved PL decay. X-Ray photoelectron spectroscopy analysis reveals that these defects are induced by the formation of an interfacial alloy during the epitaxy process. These defects could be significantly suppressed if the ZnxCd1-xSeyS1-y alloy buffer layer is artificially introduced.
引用
收藏
页码:844 / 850
页数:7
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