3-D silicon photonic lattices: cornerstone of an emerging photonics revolution

Three-dimensional photonic lattices are engineered "materials" which are the photonic analogues of semiconductors. These structures were first proposed and demonstrated in the mid-to-late 1980's. However, due to fabrication difficulties, lattices active in the infrared are only just emerging. Wide ranges of structures and fabrication approaches have been investigated. The most promising approach for many potential applications is a diamond-like structure fabricated using silicon microprocessing techniques. This approach has enabled the fabrication of 3-D silicon photonic lattices active in the infrared. The structures display band gaps centered from 12 mu down to 1.55 mu.