Plasmon-enhanced photoluminescence of Si-V centers in diamond from a nanoassembled metal-diamond hybrid structure

被引:17
|
作者
Song, Jie [1 ]
Li, Hongdong [1 ]
Lin, Feng [2 ]
Wang, Liying [1 ]
Wu, Honglin [3 ]
Yang, Yanqiang [3 ]
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Peking Univ, State Key Lab Mesoscop Phys, Sch Phys, Beijing 100871, Peoples R China
[3] Harbin Inst Technol, Ctr Condensed Matter Sci & Technol, Dept Phys, Harbin 150001, Peoples R China
来源
CRYSTENGCOMM | 2014年 / 16卷 / 36期
基金
中国国家自然科学基金;
关键词
CHEMICAL-VAPOR-DEPOSITION; SINGLE-PHOTON EMISSION; NANOPARTICLE DIMERS; RAMAN-SPECTROSCOPY; ROOM-TEMPERATURE; VACANCY CENTERS; SURFACE;
D O I
10.1039/c4ce01140f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Using a facile top-down etching approach, a subwavelength-sized diamond pit structure infilled with semi-ellipsoidal gold nanoparticles was fabricated. The three-dimensional finite-difference time-domain simulations reveal strong localized surface plasmon resonance (LSPR)scattering and enhanced electric field exhibited by this hybrid nanoassembled metal-diamond-pit. Experimentally, with excitation at 633 and 830 nm close to the calculated LSPR wavelength, the photoluminescence (PL) intensities of the peak at 738 nm originating from the single photon source of silicon-vacancy centers in diamond were significantly enhanced by factors of 100 and 50, respectively, with respect to that from normal Si-doped diamond without the hybrid structure. By means of time-resolved PL measurements, the decay kinetic mechanisms of the plasmon-related PL enhancement were investigated and are discussed.
引用
收藏
页码:8356 / 8362
页数:7
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