First-principles study of two-dimensional bilayer GaN: structure, electronic properties and temperature effect

被引:5
|
作者
Yayama, Tomoe [1 ,3 ]
Lu, Anh Khoa Augustin [2 ]
Morishita, Tetsuya [1 ,2 ]
Nakanishi, Takeshi [1 ,2 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Computat Design Adv Funct Mat CD FMat, Tsukuba, Ibaraki 3058568, Japan
[2] Natl Inst Adv Ind Sci & Technol, Math Adv Mat Open Innovat Lab MathAM OIL, Sendai, Miyagi 9808577, Japan
[3] Kogakuin Univ Technol & Engn, Sch Adv Engn, Shinjuku Ku, Tokyo 1638677, Japan
关键词
GALLIUM NITRIDE; EFFICIENT; GRAPHENE;
D O I
10.7567/1347-4065/ab06b2
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structural and electronic properties of bilayer GaN are investigated using first-principles calculations, focusing on the mechanism for stabilizing the flat and buckled bilayer structures of GaN. We confirm that, although the energy difference is small, the energy of the buckled models is lower than that of the threefold-coordinated flat model that had been regarded as the most stable bilayer GaN. In the buckled model, in contrast, a fourfold-coordinated atomic configuration is formed, which partially recovers the bulk crystalline structure and is likely to be one of the factors reducing the energy of bilayer GaN. While the flat model is not the most stable structure, there is a barrier to be overcome to transform, indicating that the flat model is a metastable structure. It appears that the existence of these multiple metastable structures is one of the unique characteristics of bilayer GaN. (C) 2019 The Japan Society of Applied Physics
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页数:6
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