Si thin film solar cells using SiH2Cl2 by rf plasma-enhanced chemical vapor deposition

被引：1

作者：

Saito, Toru ^{[1
]}

Li, Yali ^{[1
]}

Ikeda, Yoshie ^{[1
]}

Shirai, Hajime ^{[1
]}

机构：

[1] Saitama Univ, Grad Sch Sci & Technol, Dept Funct Mat Sci, Sakura, Saitama 3388570, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

silicon; solar cells;

D O I：

10.1016/j.jnoncrysol.2006.01.050

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The fabrication of p-i-n Si thin film solar cells using a SiH2Cl2-H-2 mixture by rf plasma-enhanced chemical vapor deposition is presented. A novel p-type nanocrystalline Si:H:Cl film was synthesized from H-2-diluted SiH2Cl2 and SiCl4 with high conductivity and low optical absorption in the visible and near-infrared regions. The Si:H:Cl films showed a high photoconductivity of order of > 10(-6) S/cm under 100 mW/cm(2) white light exposure. The efficiency of 6.2% has been achieved in the p-i-n solar cells fabricated from a SiH2Cl2-H-2 mixture at T-s of 340 degrees C for the first time despite a use of a single chamber system. Not only SiH4 but also SiH2Cl2 is one of possible candidates for fabricating Si thin film solar cells. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1967 / 1971

页数：5

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