Electron-phonon scattering times in three-dimensional disordered Sb films

被引：9
|
作者：
Lin, JJ [1 ]
Li, TJ
Wu, TM
机构：
[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
来源：
PHYSICAL REVIEW B | 2000年 / 61卷 / 05期
关键词：
D O I：
10.1103/PhysRevB.61.3170
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have measured the electron-phonon scattering times t(ep) in a series of three-dimensional Sb films having the characteristic of ql similar to 1, where q is the wave number of the thermal phonons, and I is the electron elastic mean free path. We observe that 1/t(ep) similar to T-p, With P approximate to 2.4, in the temperature range 1-14 K. In addition, we find a very weak dependence of 1/t(ep) on l. Our observations are compared with theoretical predictions for electronphonon interactions in the presence of disorder and with previous experimental results in thin Sb films.
引用
收藏
页码：3170 / 3172
页数：3
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