A Compact SPDT Switch Amplifier with High ON/OFF Ratio and Variable Gain for 5G Millimeter-wave Applications

被引：0
|
作者：
Kubo, Tatsuo [1 ]
Yamaguchi, Yo [1 ]
Okuyama, Yuma [1 ]
Takeda, Shinogu [1 ]
Guan, Ning [1 ]
机构：
[1] Fujikura Ltd, 5G Wireless Device Dev Dept, 1440 Mutsuzaki, Sakura, Chiba 2858550, Japan
来源：
2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2022年
关键词：
amplifier; millimeter-wave; 5G; LO signal; SPDT switch; SiGe BiCMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A newly developed SPDT switch amplifier is presented. It is designed to implement in a frequency conversion IC for 3GPP n257, n258 and n261 bands and is operated at a frequency range from 29.15 GHz to 34.40 GHz. The SPDT provides LO signals to either a TX mixer or an RX mixer and achieves more than 52 dB ON/OFF ratio and 12 dB small signal gain over the frequency range. Its gain can be changed to adjust the output power to the required LO power. It is fabricated using 0.13 mu m SiGe BiCMOS technology and the size of core area is 0.24 mm(2).
引用
收藏
页码：285 / 287
页数：3
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