Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor

被引:357
|
作者
Feng, Qingliang [1 ,2 ,5 ]
Zhu, Yiming [2 ]
Hong, Jinhua [3 ,4 ]
Zhang, Mei [2 ]
Duan, Wenjie [1 ]
Mao, Nannan [1 ,2 ]
Wu, Juanxia [1 ]
Xu, Hua [1 ]
Dong, Fengliang [2 ]
Lin, Fang [6 ]
Jin, Chuanhong [3 ,4 ]
Wang, Chunming [5 ]
Zhang, Jin [1 ]
Xie, Liming [2 ]
机构
[1] Peking Univ, Ctr Nanochem,Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Key Lab Phys & Chem Nanodevices,Coll Chem & Mol E, Beijing 100871, Peoples R China
[2] Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
[3] Zhejiang Univ, State Key Lab Silicon Mat, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Peoples R China
[4] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
[5] Lanzhou Univ, Sch Chem & Chem Engn, Lanzhou 730000, Peoples R China
[6] South China Agr Univ, Coll Sci, Guangzhou 510642, Guangdong, Peoples R China
关键词
chemical vapor deposition; two-dimensional materials; semiconductor alloys; tunable bandgaps; electrical properties; molybdenum; GRAPHENE FILMS; VALLEY POLARIZATION; MOS2; MONOLAYERS; PHOTOLUMINESCENCE; QUALITY; LAYERS;
D O I
10.1002/adma.201306095
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Semiconducting MoS2(1-x)Se2x monolayers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >105. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2648 / 2653
页数:6
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