Nanofabrication of magnetic tunnel junctions by using electron beam lithography

被引：6
|
作者：
Niizeki, T [1 ]
Kubota, H [1 ]
Ando, Y [1 ]
Miyazaki, T [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷
关键词：
tunnel magnetoresistance; single-electron tunneling; ferromagnetic tunnel junction;
D O I：
10.1016/j.jmmm.2003.12.387
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanometer-sized ferromagnetic tunnel junctions (MTJs) are suitable to investigate the enhancement of tunnel magnetoresistive effect (TMR) by Coulomb blockade effect. A new fabrication process that enables us to shrink the size of MTJs down to the order of 10 nm has been developed. MTJs structured by using this process exhibited large TMR ratio of 38%. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：1947 / 1948
页数：2
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