Dual-wavelength semiconductor laser with 191 nm mode spacing

被引:1
|
作者
Huang, CC [1 ]
Lin, CF [1 ]
机构
[1] Natl Taiwan Univ, Grad Inst Electron Opt Engn, Taipei, Taiwan
来源
关键词
broadband; competition; dual-wavelength; external cavity; nonidentical multiple quantum wells; semiconductor laser; wavelength separation;
D O I
10.1117/12.525582
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. By well aligning the external cavity, the dual-wavelength operation can be achieved with a record wavelength separation about 191 nm (27.4 THz) at 22.7degreesC. The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.
引用
收藏
页码:21 / 28
页数:8
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