Car-Parrinello simulation of initial growth stage of gallium nitride on carbon nanotubes

被引:4
|
作者
Yan, Han [2 ]
Gan, Zhiyin
Song, Xiaohui [3 ]
Lv, Qiang
Xu, Jingping [2 ]
Liu, Sheng [1 ,2 ,3 ]
机构
[1] Huazhong Univ Sci & Technol, MOEMS Div, WNLO, Sch Mech Sci & Engn, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
[3] Shanghai Jiao Tong Univ, Res Inst Micro Nano Sci & Technol, Shanghai 200030, Peoples R China
来源
关键词
Nanostructures; First-principles calculation; Carbon nanotubes; MOLECULAR-BEAM EPITAXY; GAN NANOWIRES; ADSORPTION; NH3; KINETICS; AMMONIA; SURFACE;
D O I
10.1016/j.physe.2008.12.011
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Car-Parrinello molecular dynamics (CPMD) simulations based oil the density functional theory (DFT) were conducted to determine the initial growth process of gallium nitride on exterior wall of single-walled carbon nanotubes (SWCNTs). The theoretical results revealed that the nitrogen-adsorbed surface is more easily formed on the pristine Surface of SWCNTs than on the gallium-adsorbed Surface. The results also demonstrated that the growth of gallium nitride on metallic SWCNTs is more stable than that on semiconducting ones. The gallium nitride construction structures oil both (10,0) and (5,5) SWCNTs come to satisfy the electron counting model. Our theoretical approach provides an atomic-scale insight into the regions of the initial growth processes Of gallium nitride oil single-wall carbon nanotubes. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:1143 / 1146
页数:4
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