EBG-Based 60 GHz On-Chip Antenna in Passive Silicon

被引：0

作者：

van Dijk, R. ^{[1
]}

Neto, A. ^{[1
]}

Akkermans, J. A. G. ^{[2
]}

Mills, J. ^{[3
]}

机构：

[1] TNO Def Secur & Safety, Observat Syst, Oude Waalsdorperweg 63, The Hague, Netherlands

[2] Eindhoven Univ Technol, Eindhoven, Netherlands

[3] Philips Res, Eindhoven, Netherlands

来源：

2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At most frequencies currently in use for short range data communication the available bandwidth is limiting the data rate. However, around 60 GHz there is an unlicensed frequency band with ample bandwidth appointed to support high data rate communication. Moreover, semiconductor technology for this frequency range is maturing and price levels will in a few years be suitable for consumer applications. As a result of the short wavelength physically small and integrated antennas are becoming necessary. In this paper an electromagnetic bandgap (EBG) dipole antenna designed on a passive silicon substrate is presented. The fabrication is done in a silicon-like chip process and thus resolution of the metal structures is in the order of I pm. For testing and integration purposes a balun has been added to the structure. The issues testing integrated antennas are addressed in this paper.

引用

页码：1405 / +

页数：2

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