Enhancement of third-order nonlinear optical susceptibilities in compressively strained quantum wells under the population inversion condition

被引:28
|
作者
Kuwatsuka, H [1 ]
Simoyama, T [1 ]
Ishikawa, H [1 ]
机构
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
关键词
optical frequency conversion; optical mixing; optical phase conjugation; quantum wells; quantum-well lasers; strain; semiconductor lasers; semiconductor optical amplifiers;
D O I
10.1109/3.806590
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Third-order optical nonlinear susceptibilities chi((3)) in compressively strained and nonstrained InGaAs-InGaAsP quantum wells (QW's) under the population inversion condition are discussed, The small effective mass of compressively strained QW's increases the contribution of the carrier density pulsation effect and the carrier heating effect of chi((3)). The hole burning effect is also increased due to the decrease of the carrier-carrier scattering rate. The calculation including these effects shows an enhancement of factor 3 due to 0.8% compressive strain. The values of chi((3)) are experimentally estimated from the data of nondegenerate four-wave mixing in lambda/4-shifted distributed feedback lasers. chi((3)) in 0.8% compressively strained QW's is three times larger than that in nonstrained QW's with the same linear gain.
引用
收藏
页码:1817 / 1825
页数:9
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