Theory of spin-coherent electrical transport through a defect spin state in a metal/insulator/ferromagnet tunnel junction undergoing ferromagnetic resonance

被引:4
|
作者
Harmon, N. J. [1 ]
Flatte, M. E.
机构
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
关键词
SEMICONDUCTORS; SILICON;
D O I
10.1103/PhysRevB.98.035412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We describe the coherent dynamics of electrical transport through a localized spin-dependent state, such as is associated with a defect spin, at the interface of a ferromagnet and a nonmagnetic material during ferromagnetic resonance. As the ferromagnet magnetic moment precesses, charge carriers are dynamically spin filtered by the localized state, leading to a dynamic spin accumulation on the defect. Local effective magnetic fields modify the precession of a spin on the defect, which also modifies the time-integrated total charge current through the defect. We thus identify a form of current-detected spin resonance that reveals the local magnetic environment of a carrier spin located at a defect, and thus potentially the defect's identity.
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页数:5
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