Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure

被引：3
|
作者：
Tregulov, V. V. [1 ]
Litvinov, V. G. [2 ]
Ermachikhin, A. V. [2 ]
机构：
[1] Ryazan State Univ, Ryazan 390000, Russia
[2] Ryazan State Radio Engn Univ, Ryazan 390005, Russia
来源：
SEMICONDUCTORS | 2018年 / 52卷 / 07期
关键词：
SILICON;
D O I：
10.1134/S1063782618070242
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The temperature dependence of the forward and reverse portions of the current-voltage characteristic and the photovoltage spectrum of a CdS/por-Si/p-Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation-recombination processes in the spacecharge region of the por-Si/p-Si heterojunction, carrier tunneling in the por-Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.
引用
收藏
页码：891 / 896
页数：6
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