Microstructure analysis of β-FeSi2 grown on Ag-coated Si(001) substrate

被引：4

作者：

Motomura, Shunichi ^{[1
]}

Hayashi, Kohei ^{[1
]}

Itakura, Masaru ^{[1
]}

Akiyama, Kensuke ^{[2
]}

机构：

[1] Kyushu Univ, Dept Appl Sci Elect & Mat, 6-1 Kasuga, Fukuoka 8168580, Japan

[2] Kanagawa Ind Technol Ctr, Ebina, Kanagawa 2430435, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12 | 2013年 / 10卷 / 12期

关键词：

beta-FeSi2; thin film; epitaxial relationship; atomic resolution; energy dispersive X-ray spectroscopy; ION-BEAM SYNTHESIS; EPITAXIAL-GROWTH; SI; ENHANCEMENT;

D O I：

10.1002/pssc.201300359

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Microstructure of epitaxial beta-FeSi2 crystalline film grown on Ag-coated Si (001) substrate was investigated with scanning electron microscope (SEM) and transmission electron microscopes (TEMs). It was found that the film consists of two types of beta-FeSi2 grains, or rod-like polygonal and thin platelet grains. The platelet grains are connected mutually to form large continuous-film areas on the Si(001) substrate. The crystallographic orientation relationship obtained is: beta-FeSi2(100)[011]//Si(001)[110], which is a rare epitaxial relationship. However, the interface between the platelet grains and the Si substrate is very flat at an atomic level. Moreover, remains of Ag impurities are not detected in the beta-FeSi2 grains. These results indicate that the continuous crystalline film consisting of high quality beta-FeSi2 crystals can be produced by using Ag-coated Si(001) substrate. (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1815 / 1818

页数：4

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