Thickness dependence of photoemission spectra in zinc-blende CrAs

被引:6
|
作者
Mizuguchi, M
Ono, K
Oshima, M
Okabayashi, J
Akinaga, H
Manago, T
Shirai, M
机构
[1] Univ Tokyo, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Univ Tokyo, Grad Sch Sci, Bunkyo Ku, Tokyo 1138656, Japan
[3] Natl Inst Adv Ind Sci & Technol, JRCAT, AIST, Tsukuba, Ibaraki 3058562, Japan
[4] ATP, JRCAT, Tsukuba, Ibaraki 3050046, Japan
[5] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
关键词
D O I
10.1142/S0218625X02002142
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic structure of CrAs thin films with nominal thicknesses of 2 nm and 30 nm were studied by angle-resolved photoemission spectroscopy using synchrotron radiation. The CrAs film of 2 nm is expected to form a zinc-blende phase which is predicted to have a half-metallic band structure by theoretical calculation. On the other hand, it is considered that the CrAs film of 30 nm is a polycrystalline compound judging from reflection high-energy electron diffraction patterns. Different valence-band photoemission spectra were obtained for the two films. The photoemission spectra of the CrAs film of 30 nm showed no band dispersion, whereas a band dispersion was observed in that of the CrAs film with the nominal thickness of 2 nm.
引用
收藏
页码:331 / 334
页数:4
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