Defect influence on luminescence efficiency of GaN-based LEDs

被引：5
|
作者：
Li, Shuping
Fang, Zhilai
Chen, Hangyang
Li, Jinchai
Chen, Xiaohong
Yuan, Xiaoli
Sekiguchi, Takashi
Wang, Qiming
Kang, Junyong [1 ]
机构：
[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan
[4] Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 1-3期
基金：
中国国家自然科学基金;
关键词：
defects; GaN; luminescence efficiency; LED;
D O I：
10.1016/j.mssp.2006.01.019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：371 / 374
页数：4
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