GaNAs grown by gas source molecular beam epitaxy

被引：28
|
作者：
Kondow, M
Uomi, K
Niwa, A
Kitatani, T
Watahiki, S
Yazawa, Y
Hosomi, K
Mozume, T
机构：
来源：
SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 02期
关键词：
D O I：
10.1016/S0038-1101(96)00168-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The two main keys to growing GaNAs are reducing layer thickness and using a highly efficient N source. Through careful and precise growth control, GaNAs is grown with a N content of up to about 10% by gas source molecular beam epitaxy in which a N radical is used as the N source. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：209 / 212
页数：4
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