193 nm Inspection of Extreme-Ultraviolet Mask Absorber Defect

被引：0
|
作者：
Kim, Guk-Jin [1 ]
Kim, In-Seon [1 ]
Yeung, Michael [2 ]
Lim, Chang-Moon [3 ]
Oh, Hye-Keun [1 ]
机构：
[1] Hanyang Univ, Ansan, Gyeonggi Do, South Korea
[2] Fastlitho, San Jose, CA USA
[3] SK Hynix Semicond Inc, Icheon, South Korea
来源：
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY V | 2014年 / 9048卷
关键词：
193 nm inspection; EUV mask; EUV mask inspection;
D O I：
10.1117/12.2046587
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
193 nm inspection for various defect types on top of the extreme-ultraviolet (EUV) mask is studied. The antireflection coating (ARC) is tried to enhance the defect inspection. However, adding ARC is not helpful to increase the sensitivity. Thus, 2 nm TaBO generally used for preventing the oxidation is mainly used. The aerial image deformation caused by the defect is compared to that of the defect free mask. Peak intensity difference is quantized and the sensitivity that is comparable to the ITRS defect inspection limit is chosen. The inspection criterion for typical defect types of extrusion, intrusion, pindot and pinhole is compared.
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页数：7
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