Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

被引：7
|
作者：
Tyschenko, I. E. [1 ]
Zhuravlev, K. S.
Cherkov, A. G.
Popov, V. P.
Misiuk, A.
Yankov, R. A.
机构：
[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[3] Forschungszentrum Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期
关键词：
D O I：
10.1063/1.2219146
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Characteristic features of the visible photoluminescence (PL) spectra were studied in silicon-on-insulator (SOI) wafers following high-dose (3x10(17) cm(-2)) ion implantation of hydrogen and annealing at high hydrostatic pressures. The PL behavior of the SOI material was compared with that of hydrogen-implanted bulk Si. Annealing at a pressure above 6 kbars produced a wavelength-selective increase (similar to 37 times) in the intensity of the visible PL from the implanted SOI structures. The results are explained in terms of the effect of an optical resonant cavity formed between the air/SOI and the Si/SiO2 interfaces as a result of the high-pressure annealing. (c) 2006 American Institute of Physics.
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页数：3
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