Benzo[1,2-b:4,5-b'] dithiophene-fumaronitrile-based D-A type copolymers with different π-bridges: Synthesis, characterization and photovoltaic properties

被引:9
|
作者
Lu, Jialing [1 ]
Peng, Jun [1 ]
Wang, Yuchen [2 ]
Yuan, Jianyu [1 ]
Sheng, Chuanxiang [2 ]
Wang, Hai-Qiao [1 ]
Ma, Wanli [1 ]
机构
[1] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China
[2] Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing 210094, Jiangsu, Peoples R China
基金
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词
Benzo[1,2-b:4,5-b']dithiophene; Fumaronitrile; pi-Bridge; Photovoltaic property; POLYMER SOLAR-CELLS; LOW-BANDGAP POLYMERS; OPEN-CIRCUIT VOLTAGE; DONOR-ACCEPTOR COPOLYMERS; CONJUGATED POLYMERS; GAP POLYMER; SEMICONDUCTING POLYMERS; SMALL MOLECULES; TANDEM POLYMER; SIDE-CHAIN;
D O I
10.1016/j.synthmet.2013.11.019
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Four new homologous copolymers (POP, POT, PIP and PIT), composed of benzo[1,2-b:4,5-b']dithiophene (BDT) donors and fumaronitrile (BCNV) acceptors, were designed and synthesized. The effects of different side-chains of BDT units and different pi-bridges of BCNV acceptors on polymers' thermal, optical, electrochemical, chain geometric, hole-transporting properties and photovoltaic performance were systematically investigated. POT and PTT exhibit broader absorption and narrower bandgaps than POP and PTP due to the replacement of phenyl pi-bridges with thienyl groups. All polymers show relatively deep highest occupied molecular orbitals (HOMOs) between -5.48 eV and -5.37 eV. Prospectively high open circuit voltages (V(oc)s) of the devices based on the four polymers were accomplished. The highest V-oc, 0.975 V was obtained with PTP. However, the obtained PCEs are still relatively low. We consider this is related to the polymers' poor backbone planarity, relatively low LUMO levels or low polaron photogeneration efficiency resulted from BCNV. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:57 / 65
页数:9
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