Impact ot the colloidal silica particle size on physical vapor deposition tungsten removal rate and surface roughness

被引:7
|
作者
Bouvet, D [1 ]
Beaud, P
Fazan, P
Sanjines, R
Jacquinot, E
机构
[1] Swiss Fed Inst Technol, Elect Lab, CH-1015 Lausanne, Switzerland
[2] Swiss Fed Inst Technol, Inst Phys Appl, CH-1015 Lausanne, Switzerland
[3] Clariant, Life Sci & Elect Chem Div, F-60350 Trosly Breuil, France
来源
关键词
D O I
10.1116/1.1490393
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the development of sub-0.25 mum technologies, interconnect integration is more sensitive to the surface quality and to the roughness of tungsten-polished layers. Consequently, alumina-based slurries are progressively replaced by silica-based slurries (fumed or colloidal), characterized by much smaller and softer particles. In contrast to the many investigators of alumina-based slurries, only a few investigations have been carried out on the effect of the particle size on the physical vapor deposition (PVD) tungsten, PVD titanium, and thermal oxide removal rates and on the surface roughness after polishing. In this article, we evaluate four different colloidal silica-based slurries having different particle sizes. We find that the most promising slurry is the one with the smallest particle size. We also show that the tungsten removal rate mechanism is probably neither a scratching/indentation nor a surface contact type mechanism, but most likely a mechanism controlled by the growth kinetics of the passivation layer. (C) 2002 American Vacuum Society.
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页码:1556 / 1560
页数:5
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