Electronic properties and pinning of the Fermi level in irradiated II-IV-V2 semiconductors

被引:9
|
作者
Brudnyi, V. N. [1 ]
机构
[1] Tomsk VV Kuibyshev State Univ, Tomsk 634050, Russia
关键词
INTRINSIC POINT-DEFECTS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; RADIATION DEFECTS; COMPOUND-IV; ZNSNAS2; HETEROJUNCTIONS; MODEL;
D O I
10.1134/S1063782609090085
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Experimental data on the electronic properties of II-IV-V-2 semiconductors irradiated with high-energy particles (electrons, protons, and neutrons) are reported. The limiting electrical characteristics of irradiated ternary compounds are evaluated and compared with the corresponding data for the binary III-V analogues of the compounds. Particular emphasis is placed on the determination of the limiting position of the Fermi level, F (lim), in irradiated II-IV-V-2 compounds. The results of calculations of the energy position of the intrinsic charge-neutrality level are presented.
引用
收藏
页码:1146 / 1154
页数:9
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