Improvement of electrical characteristics of fluorinated perylene diimide thin-film transistors by gate dielectric surface treatment

被引：0
|
作者：
Yang, Li-Gong [1 ,2 ]
Huang, Jia-Chi [1 ]
Li, Rong-jin [3 ]
Shi, Min-Min [1 ]
Gao, Yan [1 ,2 ]
Wang, Mang [1 ]
Hu, Wen-Ping [3 ]
Chen, Hong-Zheng [1 ,2 ]
机构：
[1] Zhejiang Univ, Dept Polymer Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Calif Int Nanosyst Inst, Hangzhou, Zhejiang, Peoples R China
[3] Chinese Acad Sci, Inst Chem, Organ Solids Lab, Beijing 100086, Peoples R China
来源：
AOE 2007: ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, CONFERENCE PROCEEDINGS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The structural and electrical properties of n-channel OTFTs based on N,N'-(4-monofluorophenyl)-3,4,9,10-perylene tetracarboxylic diimide (D4MFPP) were investigated. The influence of surface treatment on the mobility and the interface traps were quantitatively evaluated.
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页码：248 / +
页数：2
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