Time-resolved reflection spectroscopy of the spatiotemporal dynamics of photo-excited carriers in Si and GaAs

被引：22
|
作者：
Nagai, M
Kuwata-Gonokami, M
机构：
[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[2] Japan Sci & Technol Corp, Cooperat Excitat Project ERATO, Tokyo 1138656, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2002年 / 71卷 / 09期
关键词：
photo-induced carrier in semiconductors; mid-infrared reflection measurements; femtosecond pump-probe technique; plasma resonance; spatial inhomogeneity;
D O I：
10.1143/JPSJ.71.2276
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We study on the sub-picosecond mid-infrared pump-probe reflection spectroscopy on photo-doped Si and GaAs. We discover experimentally that spectral profile of metallic reflection near the plasma resonance brings us the information on both of carrier density and spatial inhomogeneity. The red-shift of the plasma resonance indicates the reduction of carrier density near the surface, while the broadening of plasma resonance is caused by the steep spatial gradient of carrier density rather than carrier damping, The spectral profile of reflection in Si shows that the carrier diffusion dominates the spatial-temporal evolution of the photo-doped carriers.
引用
收藏
页码：2276 / 2279
页数：4
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